Raman fingerprint of Pressure-Induced Phase Transitions in 2D Materials

ABSTRACT

Two-dimensional materials with remarkably electronic, optical, and mechanical properties attracted remarkable high scientific interest due to the fact that it has huge application potential. The advantage added within the fact that , the Raman spectroscopy technique has been proven to be a very fast, convenient, and nondestructive to characterize the basics and fundamental properties of 2D materials. In this paper, we discuss recent advances in application of Raman spectroscopy to atomically thin 2D materials such as graphene, MoS2, MoSe2, Wte2, MoTe2, TiS3 etc. for probing their fundamental properties such as layer dependence Raman, Temprature dependence Raman and pressure dependence Raman. A convenient and in situ characterization is necessary for identifying various fundamental properties of atomically thin 2D and other materials.

PRESENTER

Dattatray Late

Center for Nanoscience and Nanotechnology, India

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