Materials with flat energy bands can exhibit exotic quantum phases driven by electronic interactions. These bands have primary been realized in graphene-based heterostructures using the twist angle as tuning parameter. However, TMDCs are also potential candidates for fabricating and exploring the properties of 2D twisted heterostructures. We aim to the development of the technology for studying these systems, starting with a basic MOSFET geometry. Here, we take the first steps towards the fabrication of high quality devices based on 2D TMDCs. In particular, we study the positive impacts of thermal annealing, encapsulation with hexagonal boron nitride (h-BN) and of few-layer graphite (FLG) contacts on the properties of field-effect transistors based on few-layer MoS2 and WSe2. As a next step, we aim to further optimize the contact resistance of our devices and to develop local gate electrodes in order to study the electronic properties of few-layer TMDCs at low temperature.

Celia González

Universidad Autónoma de Madrid